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STK14C88-K25I PDF预览

STK14C88-K25I

更新时间: 2024-02-03 05:26:13
品牌 Logo 应用领域
其他 - ETC 存储内存集成电路静态存储器
页数 文件大小 规格书
13页 370K
描述
32K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM

STK14C88-K25I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP, DIP32,.3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.18Is Samacsys:N
最长访问时间:25 nsJESD-30 代码:R-CDIP-T32
JESD-609代码:e0长度:40.635 mm
内存密度:262144 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP32,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:4.12 mm最大待机电流:0.0015 A
子类别:SRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

STK14C88-K25I 数据手册

 浏览型号STK14C88-K25I的Datasheet PDF文件第2页浏览型号STK14C88-K25I的Datasheet PDF文件第3页浏览型号STK14C88-K25I的Datasheet PDF文件第4页浏览型号STK14C88-K25I的Datasheet PDF文件第5页浏览型号STK14C88-K25I的Datasheet PDF文件第6页浏览型号STK14C88-K25I的Datasheet PDF文件第7页 
STK14C88  
32K x 8 AutoStore™ nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
The Simtek STK14C88 is a fast static RAM with a  
• 25ns, 35ns and 45ns Access Times  
• “Hands-off” Automatic STORE with External  
nonvolatile element incorporated in each static  
memory cell. The SRAM can be read and written an  
unlimited number of times, while independent, non-  
volatile data resides in the nonvolatile elements.  
Data transfers from the SRAM to the nonvolatile ele-  
ments (the STORE operation) can take place auto-  
matically on power down. A 68µF or larger capacitor  
tied from VCAP to ground guarantees the STORE  
operation, regardless of power-down slew rate or  
loss of power from “hot swapping”. Transfers from  
the nonvolatile elements to the SRAM (the RECALL  
operation) take place automatically on restoration of  
power. Initiation of STORE and RECALL cycles can  
also be software controlled by entering specific read  
sequences. A hardware STORE may be initiated with  
the HSB pin.  
68µF Capacitor on Power Down  
STORE to nonvolatile elements Initiated by  
Hardware, Software or AutoStore™  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to nonvolatile ele-  
ments (Commercial/Industrial)  
• 100-Year Data Retention in nonvolatile ele-  
ments (Commercial/Industrial)  
• Single 5V + 10% Operation  
• Commercial, Industrial and Military Tempera-  
tures  
• 32-Pin SOIC, DIP and LCC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
1
2
V
CCX  
V
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
CAP  
A
V
V
CAP  
CCX  
HSB  
14  
12  
A
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
W
A
A
7
6
5
4
3
13  
Quantum Trap  
512 x 512  
A
A
8
A
A
A
A
POWER  
9
11  
A
CONTROL  
A5  
G
NC  
A6  
NC  
A
STORE  
A
E
2
10  
A7  
A
1
0
STORE/  
RECALL  
A8  
STATIC RAM  
A
DQ  
DQ  
7
6
5
4
3
HSB  
RECALL  
A9  
ARRAY  
DQ  
0
CONTROL  
DQ  
DQ  
DQ  
DQ  
1
2
512 x 512  
A11  
A12  
A13  
A14  
DQ  
V
SS  
32 - DIP  
32 - LCC  
32 - SOIC  
SOFTWARE  
DETECT  
A
- A  
13  
0
DQ  
DQ  
DQ  
PIN NAMES  
0
1
2
COLUMN I/O  
A
- A  
Address Inputs  
Data In/Out  
0
14  
COLUMN DEC  
DQ -DQ  
0
7
DQ  
3
4
DQ  
E
W
G
Chip Enable  
Write Enable  
Output Enable  
DQ  
DQ  
DQ  
5
6
7
A
A A A A A  
1 2 3 4 10  
0
G
HSB  
Hardware Store Busy (I/O)  
Power (+ 5V)  
Capacitor  
E
W
V
V
V
CCX  
CAP  
SS  
Ground  
December 2002  
1
Document Control # ML0014 rev 0.0  

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