Datasheet > STK14C88C-3C35I

STK14C88C-3C35I

更新时间： 2024-02-19 06:26:34

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
21页	447K
描述
Non-Volatile SRAM,

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技术参数
数据手册

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STK14C88C-3C35I 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	内存集成电路类型：	NON-VOLATILE SRAM

STK14C88C-3C35I 数据手册

STK14C88C-3

DC Electrical Characteristics (continued)

Over the Operating Range

Parameter

V_IH

Description

Input HIGH voltage

Test Conditions

Min

Typ ^[3]

Max

V_CC+ 0.5

0.8

Unit

Industrial

Military

2.0

–

2.2

V_IL

Input LOW voltage

Output HIGH voltage

Output LOW voltage

Storage capacitor

V_SS– 0.5

–

V_OH

V_OL

V_CAP

I_OUT= –2 mA

2.4

–

I_OUT= 4 mA

–

0.4

[5]

Between V_CAPpin and V_SS

–

180

F

[6, 7]

V_VCAP

Maximum voltage driven on V_CAPV_CC= Max

pin by the device

V_CC

Notes

5. Min V

value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max V

value guarantees that the capacitor on

CAP

is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore it

CAP

is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on V

options.

CAP

6. Maximum voltage on V

pin (V

) is provided for guidance when choosing the V

capacitor. The voltage rating of the V capacitor across the operating

CAP

VCAP

CAP

temperature range should be higher than the V

voltage.

VCAP

7. These parameters are guaranteed by design and are not tested.

Document Number: 002-23966 Rev. *A

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