Datasheet > STK12N05L

STK12N05L

更新时间： 2024-09-18 22:59:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	182K
描述
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STK12N05L 数据手册

STK12N05L

STK12N06L

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STK12N05L

STK12N06L

50 V

60 V

< 0.15 Ω

12 A

■

TYPICAL R_DS(on)= 0.115 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

LOGIC LEVEL COMPATIBLE INPUT

175^oC OPERATING TEMPERATURE FOR

STANDARD PACKAGE

SOT-82

SOT-194

(option)

■

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STK12N05L

STK12N06L

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

± 15

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.33

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

November 1996

12 3 4 5 6 7...10

中文翻译

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