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STK10C68-C20 PDF预览

STK10C68-C20

更新时间: 2024-11-06 23:35:07
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
9页 109K
描述
NVRAM (EEPROM Based)

STK10C68-C20 数据手册

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STK10C68  
8K x 8 nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
The Simtek STK10C68 is a fast static RAM with a nonvol-  
atile electrically erasable PROM (EEPROM) element  
incorporated in each static memory cell. The SRAM can  
be read and written an unlimited number of times, while  
independent nonvolatile data resides in EEPROM. Data  
may easily be transferred from the SRAM to the EEPROM  
(the STORE operation), or from the EEPROM to the SRAM  
(the RECALL operation), using the NE pin. Transfers  
from the EEPROM to the SRAM (the RECALL operation)  
also take place automatically on restoration of power.  
The STK10C68 combines the high performance and ease  
of use of a fast SRAM with nonvolatile data integrity.  
20ns, 25ns, 35ns and 45ns Access Times  
STORE to EEPROM Initiated by Hardware  
RECALL to SRAM Initiated by Hardware or  
Power Restore  
Automatic STORE Timing  
10mA Typical ICC at 200ns Cycle Time  
Unlimited READ, WRITE and RECALL Cycles  
1,000,000 STORE Cycles to EEPROM  
100-Year Data Retention over Full Industrial  
Temperature Range  
Commercial and Industrial Temperatures  
28-Pin DIP and SOIC Packages  
The STK10C68 features industry-standard pinout for non-  
volatile RAMs. MIL-STD-883 and Standard Military Draw-  
ing (SMD #5962-93056) devices are also available.  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
NE  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
W
NC  
EEPROM ARRAY  
128 x 512  
A
A
A
A
A
A
A
A
A
DQ  
2
12  
3
7
4
A
6
5
4
3
2
8
A
9
A
11  
G
5
A
5
6
STORE  
A
7
6
8
A
E
10  
A
A
A
A
A
7
9
STATIC RAM  
ARRAY  
1
0
RECALL  
10  
11  
12  
13  
14  
DQ  
DQ  
DQ  
7
6
8
0
128 x 512  
DQ  
1
2
5
28 - 300 PDIP  
28 - 300 CDIP  
28 - 350 SOIC  
9
DQ  
V
DQ  
DQ  
4
3
11  
12  
SS  
PIN NAMES  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
COLUMN I/O  
STORE/  
RECALL  
CONTROL  
A
- A  
12  
Address Inputs  
Write Enable  
Data In/Out  
0
COLUMN DEC  
W
DQ - DQ  
0
7
E
Chip Enable  
Output Enable  
Nonvolatile Enable  
Power (+ 5V)  
Ground  
DQ5  
DQ6  
DQ7  
A3 A  
4 A10  
A0 A1 A2  
G
NE  
G
NE  
E
V
CC  
SS  
W
V
July 1999  
4-1  

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