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STK10C68-C35M PDF预览

STK10C68-C35M

更新时间: 2024-11-07 05:29:27
品牌 Logo 应用领域
SIMTEK 存储内存集成电路静态存储器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 471K
描述
8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK10C68-C35M 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP, DIP28,.3Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.27Is Samacsys:N
最长访问时间:35 ns其他特性:EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES
JESD-30 代码:R-CDIP-T28JESD-609代码:e0
长度:35.56 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP28,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B座面最大高度:4.2418 mm
最大待机电流:0.002 A子类别:SRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn85Pb15)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

STK10C68-C35M 数据手册

 浏览型号STK10C68-C35M的Datasheet PDF文件第2页浏览型号STK10C68-C35M的Datasheet PDF文件第3页浏览型号STK10C68-C35M的Datasheet PDF文件第4页浏览型号STK10C68-C35M的Datasheet PDF文件第5页浏览型号STK10C68-C35M的Datasheet PDF文件第6页浏览型号STK10C68-C35M的Datasheet PDF文件第7页 
STK10C68  
STK10C68-M SMD#5962-93056  
8K x 8 nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
Obsolete - Not Recommend for new Designs  
DESCRIPTION  
FEATURES  
The Simtek STK10C68 is a fast static RAM with a nonvol-  
atile element incorporated in each static memory cell. The  
SRAM can be read and written an unlimited number of  
times, while independent nonvolatile data resides in Non-  
volatile Elements. Data may easily be transferred from  
the SRAM to the Nonvolatile Elements (the STORE oper-  
ation), or from the Nonvolatile Elements to the SRAM  
(the RECALL operation), using the NE pin. Transfers  
from the Nonvolatile Elements to the SRAM (the  
RECALL operation) also take place automatically on  
restoration of power. The STK10C68 combines the high  
performance and ease of use of a fast SRAM with nonvol-  
atile data integrity.  
• 25ns, 35ns, 45ns and 55ns Access Times  
STORE to Nonvolatile Elements Initiated by  
Hardware  
RECALL to SRAM Initiated by Hardware or  
Power Restore  
• Automatic STORE Timing  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments (Industrial/Commercial)  
• 100-Year Data Retention (Industrial/Commer-  
cial)  
• Commercial, Industrial and Military Tempera-  
tures  
• 28-Pin DIP, SOIC and LCC Packages  
The STK10C68 features industry-standard pinout for non-  
volatile RAMs. MIL-STD-883 and Standard Military Draw-  
ing (SMD #5962-93056) devices are available.  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
1
NE  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
W
NC  
2
A
QUANTUM TRAP  
128 x 512  
12  
3
A
A
A
A
A
A
A
A
DQ  
7
6
5
4
3
2
4
A
8
5
A
A
G
9
A
5
6
11  
STORE  
7
A
A
A
A
A
A
6
8
A
E
10  
9
1
0
7
STATIC RAM  
ARRAY  
10  
11  
12  
13  
14  
DQ  
DQ  
DQ  
7
RECALL  
0
6
5
8
DQ  
DQ  
1
128 x 512  
DQ  
DQ  
2
4
3
9
V
SS  
11  
12  
28 - DIP  
28 - SOIC  
28 - LCC  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
COLUMN I/O  
STORE/  
RECALL  
CONTROL  
PIN NAMES  
COLUMN DEC  
A
- A  
12  
Address Inputs  
Write Enable  
Data In/Out  
0
W
A3 A  
4 A10  
A0 A1 A2  
DQ - DQ  
0
7
G
NE  
E
Chip Enable  
Output Enable  
Nonvolatile Enable  
Power (+ 5V)  
Ground  
G
E
NE  
W
V
CC  
SS  
V
March 2006  
1
Document Control # ML0006 rev 0.2  

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