STF6N60M2 PDF预览

STF6N60M2

更新时间: 2025-07-15 14:57:43
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 1109K
描述
N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET,TO-220FP封装

STF6N60M2 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.52峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STF6N60M2 数据手册

 浏览型号STF6N60M2的Datasheet PDF文件第1页浏览型号STF6N60M2的Datasheet PDF文件第2页浏览型号STF6N60M2的Datasheet PDF文件第3页浏览型号STF6N60M2的Datasheet PDF文件第5页浏览型号STF6N60M2的Datasheet PDF文件第6页浏览型号STF6N60M2的Datasheet PDF文件第7页 
Electrical characteristics  
STF6N60M2, STP6N60M2, STU6N60M2  
2
Electrical characteristics  
(T = 25 °C unless otherwise specified)  
C
Table 5. On /off states  
Test conditions  
Symbol  
Parameter  
Drain-source  
Min.  
Typ.  
Max. Unit  
V(BR)DSS  
ID = 1 mA, VGS = 0  
600  
V
breakdown voltage  
V
DS = 600 V  
1
µA  
µA  
Zero gate voltage  
IDSS  
drain current (VGS = 0)  
V
DS = 600 V, TC=125 °C  
GS = ± 25 V  
100  
Gate-body leakage  
current (VDS = 0)  
IGSS  
V
10  
4
µA  
V
VGS(th)  
RDS(on)  
Gate threshold voltage VDS = VGS, ID = 250 µA  
2
3
Static drain-source  
VGS = 10 V, ID = 2.25 A  
on-resistance  
1.06  
1.2  
Ω
Table 6. Dynamic  
Symbol  
Parameter  
Input capacitance  
Output capacitance  
Test conditions  
Min.  
Typ.  
232  
14  
Max. Unit  
Ciss  
-
-
-
-
pF  
pF  
V
DS = 100 V, f = 1 MHz,  
Coss  
VGS = 0  
Crss  
Reverse transfer  
capacitance  
-
-
-
0.7  
71  
-
-
-
pF  
pF  
Equivalent output  
capacitance  
(1)  
Coss eq.  
VDS = 0 to 480 V, VGS = 0  
Intrinsic gate  
resistance  
RG  
f = 1 MHz open drain  
6.5  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
-
-
-
8
1.7  
4
-
-
-
nC  
nC  
nC  
VDD = 480 V, ID = 4.5 A,  
VGS = 10 V  
(see Figure 18)  
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
Table 7. Switching times  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
-
-
-
-
9.5  
7.4  
24  
-
-
-
-
ns  
ns  
ns  
ns  
V
DD = 300 V, ID = 1.65 A,  
RG = 4.7 Ω, VGS = 10 V  
(see Figure 17 and Figure 22)  
Turn-off delay time  
Fall time  
22.5  
4/18  
DocID024771 Rev 2  

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