Datasheet > STF6N80K5

STF6N80K5

更新时间： 2023-12-20 18:46:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	825K
描述
N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET，TO-220FP封装

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STF6N80K5 数据手册

STF6N80K5,

STFI6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet

production data

Features

Order code

V_DS

R_DS(on)max

I_D

P_TOT

STF6N80K5

STFI6N80K5

800 V

1.6 Ω

4.5 A 25 W

• Industry’s lowest R_DS(on)

TO-220FP

I²PAKFP

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

D(2)

Applications

• Switching applications

Description

G(1)

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

S(3)

AM01476v1

Table 1. Device summary

Order code

Marking

Package

Packing

STF6N80K5

STFI6N80K5

TO-220FP

I²PAKFP

6N80K5

Tube

September 2016

DocID024664 Rev 4

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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