生命周期: | Obsolete | 零件包装代码: | ISOTOP |
包装说明: | ISOTOP, 4 PIN | 针数: | 4 |
Reach Compliance Code: | compliant | 风险等级: | 5.81 |
Is Samacsys: | N | 其他特性: | UL RECOGNIZED |
雪崩能效等级(Eas): | 1014 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 53 A | 最大漏极电流 (ID): | 53 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 650 pF | JESD-30 代码: | R-PUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 460 W | 最大功率耗散 (Abs): | 460 W |
最大脉冲漏极电流 (IDM): | 212 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大开启时间(吨): | 210 ns | Base Number Matches: | 1 |
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