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STE53NM50 PDF预览

STE53NM50

更新时间: 2024-11-08 19:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 46K
描述
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,50A I(D),SOT-227B

STE53NM50 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):50 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):450 W子类别:FET General Purpose Power
Base Number Matches:1

STE53NM50 数据手册

 浏览型号STE53NM50的Datasheet PDF文件第2页浏览型号STE53NM50的Datasheet PDF文件第3页浏览型号STE53NM50的Datasheet PDF文件第4页浏览型号STE53NM50的Datasheet PDF文件第5页浏览型号STE53NM50的Datasheet PDF文件第6页 
STE53NM50  
- 50A ISOTOP  
N-CHANNEL 500V - 0.08  
MDmesh Power MOSFET  
PRELIMINARY DATA  
TYPE  
V
R
DS(on)  
I
D
DSS  
STE53NM50  
500V  
< 0.1Ω  
50 A  
TYPICAL R (on) = 0.08Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
ISOTOP  
DESCRIPTION  
The MDmesh is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH horizontal  
layout. The resulting product has an outstanding low  
on-resistance, impressively high dv/dt and excellent  
avalanche characteristics. The adoption of the  
Company’s proprietary strip technique yields overall  
dynamic performancethat is significantly better than  
that of similar competition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh family is very suitable for increasing  
power density of high voltage converters allowing  
system miniaturization and higher efficiencies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-source Voltage (V = 0)  
Value  
500  
Unit  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
500  
V
DGR  
GS  
V
Gate- source Voltage  
±30  
V
GS  
I
Drain Current (continuos) at T = 25°C  
50  
A
D
D
C
I
Drain Current (continuos) at T = 100°C  
31.5  
200  
A
C
I
(
)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
450  
W
TOT  
C
Derating Factor  
3.6  
W/°C  
V/ns  
°C  
°C  
dv/dt  
Peak Diode Recovery voltage slope  
Storage Temperature  
6
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
()Pulse width limited by safe operating area  
November 2000  
1/6  

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