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STE26N50 PDF预览

STE26N50

更新时间: 2024-01-16 03:52:08
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
8页 156K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE26N50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:ISOTOP
包装说明:POWER, ISOTOP-4针数:4
Reach Compliance Code:compliant风险等级:5.8
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):26 A最大漏极电流 (ID):26 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

STE26N50 数据手册

 浏览型号STE26N50的Datasheet PDF文件第2页浏览型号STE26N50的Datasheet PDF文件第3页浏览型号STE26N50的Datasheet PDF文件第4页浏览型号STE26N50的Datasheet PDF文件第5页浏览型号STE26N50的Datasheet PDF文件第6页浏览型号STE26N50的Datasheet PDF文件第7页 
STE26N50  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR IN ISOTOP PACKAGE  
TYPE  
VDSS  
RDS(on)  
ID  
STE26N50  
500 V  
< 0.2 Ω  
26 A  
4
HIGH CURRENT POWER MODULE  
AVALANCHE RUGGED TECHNOLOGY  
(SEE IRFP450 FOR RATING)  
VERY LARGE SOA - LARGE PEAK POWER  
CAPABILITY  
3
1
2
EASY TO MOUNT  
SAME CURRENT CAPABILITY FOR THE  
TWO SOURCE TERMINALS  
EXTREMELY LOW Rth JUNCTION TO CASE  
VERY LOW DRAIN TO CASE CAPACITANCE  
VERY LOW INTERNAL PARASITIC  
INDUCTANCE (TYPICALLY < 5 nH)  
ISOLATED PACKAGE UL RECOGNIZED  
(FILE No E81743)  
ISOTOP  
INTERNAL SCHEMATIC DIAGRAM  
INDUSTRIAL APPLICATIONS:  
SMPS & UPS  
MOTOR CONTROL  
WELDING EQUIPMENT  
OUTPUT STAGE FOR PWM, ULTRASONIC  
CIRCUITS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
Drain-Source Voltage (VGS = 0)  
Drain-Gate Voltage (RGS = 20 k)  
Gate-Source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDG R  
VGS  
500  
± 20  
26  
V
ID  
A
ID  
17  
A
IDM()  
Ptot  
104  
A
Total Dissipation at Tc = 25 oC  
300  
W
W/oC  
oC  
oC  
V
Derating Factor  
2.4  
Tstg  
Tj  
Storage Temperature  
-55 to 150  
150  
Max. Operating Junction Temperature  
Insulation Withstand Voltage (AC-RMS)  
VISO  
2500  
() Pulse width limited by safe operating area  
1/8  
July 1993  

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