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STC201F PDF预览

STC201F

更新时间: 2024-10-30 09:01:15
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
6页 387K
描述
NPN Silicon Transistor

STC201F 数据手册

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STC201F  
NPN Silicon Transistor  
PIN Connection  
Descriptions  
General purpose amplifier  
High current application  
Features  
High hFE : hFE=160~320  
Low collector saturation voltage  
: VCE(sat)=0.5V(MAX.)  
SOT-89  
Ordering Information  
Type No.  
Marking  
Package Code  
C201  
YWW  
STC201F  
SOT-89  
C201: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)  
Absolute maximum ratings  
(Ta=25°C)  
Characteristic  
Symbol  
Ratings  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
VCBO  
VCEO  
VEBO  
IC  
45  
V
V
40  
5
V
1
A(DC)  
Collector current  
ICP*  
PC  
2
0.5  
A(Pulse)  
W
Collector power dissipation  
**  
1
PC  
Junction temperature  
Storage temperature  
TJ  
150  
°C  
°C  
Tstg  
-55~150  
* : Single pulse, tp= 300 ㎲  
** : When mounted on ceramic substrate(250 ㎟×0.8t)  
KSD-T5B018-000  
1

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