Datasheet > STC2073F

STC2073F

更新时间： 2024-10-30 09:01:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	400K
描述
NPN Silicon Transistor

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中文翻译

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数据手册

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STC2073F 数据手册

STC2073F

NPN Silicon Transistor

Descriptions

• General purpose amplifier

PIN Connection

• High voltage application

Features

• High collector breakdown voltage

: V_CEO= 160V

• Low collector saturation voltage

: V_CE(sat)=0.5V(MAX.)

2 3

SOT-89

• “Green” device and RoHS compliant device

• Available in full lead (Pb)-free device

Ordering Information

Type No.

Marking

Package Code

SOT-89

N73

YWW

STC2073F

N73: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

V_CBO

V_CEO

V_EBO

I_C

160

A(DC)

Collector current

I_CP*

P_C

0.5

A(Pulse)

Collector power dissipation

Junction temperature

P_C

T_J

150

°C

Storage temperature

T_stg

-55~150

* : Single pulse, tp= 300 ㎲

** : When mounted on ceramic substrate(250 ㎟×0.8t)

KSD-T5B016-003

12 3 4 5 6

中文翻译

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