STC08DE150

更新时间： 2024-11-05 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管
页数	文件大小	规格书
9页	268K
描述
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT? 1500 V - 8 A - 0.075 OHM

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中文翻译

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技术参数
数据手册

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STC08DE150 技术参数

生命周期：	Obsolete	零件包装代码：	TO-247
包装说明：	TO-247, 4 PIN	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.83	最大集电极电流 (IC)：	8 A
配置：	SINGLE WITH BUILT-IN FET AND DIODE	最小直流电流增益 (hFE)：	4.5
JEDEC-95代码：	TO-247	JESD-30 代码：	R-PSFM-T4
元件数量：	1	端子数量：	4
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	最大功率耗散 (Abs)：	155 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

STC08DE150 数据手册

STC08DE150

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

ESBT™ 1500 V - 8 A - 0.075 W

PRELIMINARY DATA

Table 1: General Features

Figure 1: Package

CS(ON)

0.6 V

8 A

0.075 W

LOW EQUIVALENT ON RESISTANCE

VERY FAST-SWITCH, UP TO 150 kHz

SQUARED RBSOA, UP TO 1500 V

VERY LOW C

DRIVEN BY RG = 47 W

ISS

APPLICATION

SINGLE SWITCH SMPS BASED ON THREE

PHASE MAINS

TO247-4L

DESCRIPTION

The STC08DE150 is manufactured in a hybrid

structure, using dedicated high voltage Bipolar

and low voltage MOSFET technologies, aimed at

providing the best performance in ESBT topology.

The STC08DE150 is designed for use in aux

flyback smps for any three phase application.

Figure 2: Internal Schematic Diagram

Electrical Symbol

Device Structure

Table 2: Order Code

Part Number

Marking

Package

TO247-4L

Packaging

STC08DE150

C08DE150

TUBE

Rev. 1

January 2005

1/9

12 3 4 5 6 7...9

中文翻译

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