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STC08IE150HV PDF预览

STC08IE150HV

更新时间: 2024-11-06 03:11:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管
页数 文件大小 规格书
7页 121K
描述
Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm

STC08IE150HV 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:ROHS COMPLIANT PACKAGE-4
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.81
最大集电极电流 (IC):8 A配置:SINGLE WITH BUILT-IN FET AND DIODE
最小直流电流增益 (hFE):4.5JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):208 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STC08IE150HV 数据手册

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STC08IE150HV  
Emitter Switched Bipolar Transistor  
ESBT 1500 V - 8 A - 0.10  
Features  
PRELIMINARY DATA  
V
I
R
CS(ON)  
CS(ON)  
C
0.8 V  
8 A  
0.10  
High voltage / high current Cascode  
configuration  
Low equivalent on resistance  
Very fast-switch, up to 150 kHZ  
Squared rbsoa, up to 1500 V  
Very low C  
driven by R = 47  
G
ISS  
Very low turn-off cross over time  
TO247-4LHV  
In compliance with the 2002/93/EC European  
Directive  
Applications  
Internal Schematic Diagram  
Aux SMPS for three phase mains  
Sepic PFC  
Description  
The STC08IE150HV is manufactured in  
Monolithic ESBT Technology, aimed to provide  
best performance in high frequency / high voltage  
applications. it is designed for use in Gate Driven  
based topologies.  
Order Codes  
Part Number  
Marking  
Package  
Packaging  
STC08IE150HV  
C08IE150HV  
TO247-4LHV  
TUBE  
Rev 2  
December 2006  
1/7  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
7

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