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STB21N90K5 PDF预览

STB21N90K5

更新时间: 2024-11-03 12:36:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 998K
描述
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages

STB21N90K5 技术参数

生命周期:Active包装说明:ROHS COMPLIANT, TO-263, D2PAK-3/2
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.52
雪崩能效等级(Eas):200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):18.5 A最大漏极电流 (ID):18.5 A
最大漏源导通电阻:0.299 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):74 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB21N90K5 数据手册

 浏览型号STB21N90K5的Datasheet PDF文件第2页浏览型号STB21N90K5的Datasheet PDF文件第3页浏览型号STB21N90K5的Datasheet PDF文件第4页浏览型号STB21N90K5的Datasheet PDF文件第5页浏览型号STB21N90K5的Datasheet PDF文件第6页浏览型号STB21N90K5的Datasheet PDF文件第7页 
STB21N90K5, STF21N90K5, STP21N90K5,  
STW21N90K5  
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5  
Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet — production data  
Features  
TAB  
Order codes VDSS RDS(on)max  
ID  
PW  
3
3
1
2
STB21N90K5  
STF21N90K5  
250 W  
40 W  
1
2
D PAK  
TO-220FP  
900 V < 0.299 Ω 18.5 A  
TAB  
STP21N90K5  
STW21N90K5  
250 W  
TO-220 worldwide best RDS(on)  
Worldwide best FOM (figure of merit)  
Ultra low gate charge  
3
2
3
1
2
1
TO-220  
TO-247  
100% avalanche tested  
Zener-protected  
Figure 1.  
Internal schematic diagram  
D(2, TAB)  
Applications  
Switching applications  
Description  
G(1)  
These devices are N-channel Power MOSFETs  
developed using SuperMESH™ 5 technology.  
This revolutionary, avalanche-rugged, high  
voltage Power MOSFET technology is based on  
an innovative proprietary vertical structure. The  
result is a drastic reduction in on-resistance and  
ultra low gate charge for applications which  
require superior power density and high  
efficiency.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21N90K5  
STF21N90K5  
STP21N90K5  
STW21N90K5  
D2PAK  
TO-220FP  
TO-220  
Tape and reel  
21N90K5  
Tube  
TO-247  
October 2012  
Doc ID 16744 Rev 6  
1/22  
This is information on a product in full production.  
www.st.com  
22  

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