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STB21NM50N-1 PDF预览

STB21NM50N-1

更新时间: 2024-11-30 22:07:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
16页 636K
描述
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

STB21NM50N-1 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:ROHS COMPLIANT, TO-262, I2PAK-3
针数:3Reach Compliance Code:unknown
风险等级:5.8Is Samacsys:N
雪崩能效等级(Eas):480 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):18 A
最大漏极电流 (ID):18 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB21NM50N-1 数据手册

 浏览型号STB21NM50N-1的Datasheet PDF文件第2页浏览型号STB21NM50N-1的Datasheet PDF文件第3页浏览型号STB21NM50N-1的Datasheet PDF文件第4页浏览型号STB21NM50N-1的Datasheet PDF文件第5页浏览型号STB21NM50N-1的Datasheet PDF文件第6页浏览型号STB21NM50N-1的Datasheet PDF文件第7页 
STP21NM50N-STF21NM50N-STW21NM50N  
STB21NM50N - STB21NM50N-1  
N-CHANNEL 500V - 0.15- 18A TO-220/FP/D2/I2PAK/TO-247  
SECOND GENERATION MDmesh™ MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
DSS  
DS(on)  
(@Tjmax)  
STB21NM50N  
STB21NM50N-1  
STF21NM50N  
STP21NM50N  
STW21NM50N  
550 V  
550 V  
550 V  
550 V  
550 V  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
18 A  
18 A  
18 A (*)  
18 A  
18 A  
3
1
3
3
2
2
1
2
D PAK  
1
TO-220  
TO-220FP  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
LOW GATE INPUT RESISTANCE  
3
2
1
3
DESCRIPTION  
2
2
1
I PAK  
The STx21NM50N is realized with the second  
generation of MDmesh Technology. This revolu-  
tionary MOSFET associates a new vertical struc-  
ture to the Company's strip layout to yield one of  
the world's lowest on-resistance and gate charge.  
It is therefore suitable for the most demanding high  
efficiency converters  
TO-247  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
The MDmesh™ II family is very suitable for in-  
creasing power density of high voltage converters  
allowing system miniaturization and higher effi-  
ciencies.  
Table 2: Order Codes  
SALES TYPE  
STB21NM50N  
STB21NM50N-1  
MARKING  
B21NM50N  
B21NM50N  
PACKAGE  
PACKAGING  
TAPE & REEL  
TUBE  
2
D PAK  
2
I PAK  
STF21NM50N  
STP21NM50N  
STW21NM50N  
F21NM50N  
P21NM50N  
W21NM50N  
TO-220FP  
TO-220  
TUBE  
TUBE  
TUBE  
TO-247  
Rev. 3  
October 2005  
1/16  

STB21NM50N-1 替代型号

型号 品牌 替代类型 描述 数据表
STP21NM50N STMICROELECTRONICS

类似代替

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB21NM50N STMICROELECTRONICS

类似代替

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB16NM50N STMICROELECTRONICS

功能相似

N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Po

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