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STB16NM50N PDF预览

STB16NM50N

更新时间: 2024-11-07 04:02:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 555K
描述
N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STB16NM50N 数据手册

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STB16NM50N - STF/I16NM50N  
STP16NM50N - STW16NM50N  
N-channel 500 V - 0.21 - 15 A MDmesh™ II Power MOSFET  
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
2
1
1
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
550 V  
550 V  
550 V  
550 V  
550 V  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
15 A  
15 A  
15 A (1)  
PAK  
PAK  
3
2
1
15 A  
TO-247  
15 A  
3
3
2
2
1
1
1. Limited only by maximum temperature allowed  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
B16NM50N  
I16NM50N  
F16NM50N  
P16NM50N  
W16NM50N  
Tape and reel  
Tube  
PAK  
TO-220FP  
TO-220  
Tube  
Tube  
TO-247  
Tube  
March 2008  
Rev 2  
1/18  
www.st.com  
18  

STB16NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STB21NM50N STMICROELECTRONICS

类似代替

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB21NM50N-1 STMICROELECTRONICS

功能相似

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STP21NM50N STMICROELECTRONICS

功能相似

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

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