生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | 风险等级: | 5.45 |
雪崩能效等级(Eas): | 400 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 650 V | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.19 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 68 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB21-N-7 | TE |
获取价格 |
STD and STB Markers | |
STB21-N-8 | TE |
获取价格 |
STD and STB Markers | |
STB21-N-9 | TE |
获取价格 |
STD and STB Markers | |
STB21N90K5 | STMICROELECTRONICS |
获取价格 |
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-p | |
STB21NM50N | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET | |
STB21NM50N-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET | |
STB21NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-2 | |
STB21NM60N- | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-2 | |
STB21NM60N-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFE | |
STB21NM60ND | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Powe |