5秒后页面跳转
STB21N65M5TRL PDF预览

STB21N65M5TRL

更新时间: 2024-12-01 12:59:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
22页 1439K
描述
17A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

STB21N65M5TRL 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknown风险等级:5.45
雪崩能效等级(Eas):400 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (ID):17 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):68 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB21N65M5TRL 数据手册

 浏览型号STB21N65M5TRL的Datasheet PDF文件第2页浏览型号STB21N65M5TRL的Datasheet PDF文件第3页浏览型号STB21N65M5TRL的Datasheet PDF文件第4页浏览型号STB21N65M5TRL的Datasheet PDF文件第5页浏览型号STB21N65M5TRL的Datasheet PDF文件第6页浏览型号STB21N65M5TRL的Datasheet PDF文件第7页 
STB21N65M5, STF21N65M5  
STI21N65M5, STP21N65M5, STW21N65M5  
N-channel 650 V, 0.150 , 17 A MDmesh™ V Power MOSFET  
PAK, TO-220FP, TO-220, I²PAK, TO-247  
Features  
VDSS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
PW  
3
2
3
2
1
1
STB21N65M5  
STF21N65M5  
STI21N65M5  
STP21N65M5  
STW21N65M5  
17 A 125 W  
17 A(1) 30 W  
TO-220  
PAK  
710 V < 0.179 Ω  
17 A 125 W  
3
2
3
3
1
1
2
1
1. Limited only by maximum temperature allowed  
PAK  
TO-247  
TO-220FP  
Worldwide best R  
* area  
DS(on)  
Higher V  
rating  
DSS  
High dv/dt capability  
Excellent switching performance  
100% avalanche tested  
Figure 1.  
Internal schematic diagram  
$ꢅꢆꢇ  
Application  
Switching applications  
'ꢅꢁꢇ  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21N65M5  
STF21N65M5  
STI21N65M5  
STP21N65M5  
STW21N65M5  
PAK  
TO-220FP  
PAK  
Tape and reel  
Tube  
21N65M5  
Tube  
TO-220  
TO-247  
Tube  
Tube  
May 2011  
Doc ID 15427 Rev 4  
1/22  
www.st.com  
22  

与STB21N65M5TRL相关器件

型号 品牌 获取价格 描述 数据表
STB21-N-7 TE

获取价格

STD and STB Markers
STB21-N-8 TE

获取价格

STD and STB Markers
STB21-N-9 TE

获取价格

STD and STB Markers
STB21N90K5 STMICROELECTRONICS

获取价格

N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-p
STB21NM50N STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB21NM50N-1 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB21NM60N STMICROELECTRONICS

获取价格

N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-2
STB21NM60N- STMICROELECTRONICS

获取价格

N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-2
STB21NM60N-1 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFE
STB21NM60ND STMICROELECTRONICS

获取价格

N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Powe