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ST93C66B6

更新时间: 2024-10-31 23:34:55
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
13页 109K
描述
Microwire Serial EEPROM

ST93C66B6 数据手册

 浏览型号ST93C66B6的Datasheet PDF文件第2页浏览型号ST93C66B6的Datasheet PDF文件第3页浏览型号ST93C66B6的Datasheet PDF文件第4页浏览型号ST93C66B6的Datasheet PDF文件第5页浏览型号ST93C66B6的Datasheet PDF文件第6页浏览型号ST93C66B6的Datasheet PDF文件第7页 
ST93C66  
ST93C67  
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 256 x 16 or 512 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (CM)  
150mil Width  
– 4.5V to 5.5V for ST93C66 version  
– 3V to 5.5V for ST93C67 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ST93C66 and ST93C67 are replaced by the  
M93C66  
Figure 1. Logic Diagram  
DESCRIPTION  
This specification covers a range of 4K bit serial  
EEPROM products, the ST93C66 specified at 5V  
± 10% and theST93C67 specified at 3V to 5.5V.In  
the text, products are referred to as ST93C66.  
The ST93C66 is a 4K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q). The 4K  
bit memory is divided into either 512 x 8 bit bytes  
or 256 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
V
CC  
D
Q
C
S
ST93C66  
ST93C67  
Table 1. Signal Names  
ORG  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
V
SS  
AI01252B  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
July 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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