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ST93C67CM3TR PDF预览

ST93C67CM3TR

更新时间: 2024-09-15 22:40:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
13页 109K
描述
4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

ST93C67CM3TR 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N其他特性:CAN BE ORGANIZED AS 256 X 16
备用内存宽度:8最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

ST93C67CM3TR 数据手册

 浏览型号ST93C67CM3TR的Datasheet PDF文件第2页浏览型号ST93C67CM3TR的Datasheet PDF文件第3页浏览型号ST93C67CM3TR的Datasheet PDF文件第4页浏览型号ST93C67CM3TR的Datasheet PDF文件第5页浏览型号ST93C67CM3TR的Datasheet PDF文件第6页浏览型号ST93C67CM3TR的Datasheet PDF文件第7页 
ST93C66  
ST93C67  
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 256 x 16 or 512 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (CM)  
150mil Width  
– 4.5V to 5.5V for ST93C66 version  
– 3V to 5.5V for ST93C67 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ST93C66 and ST93C67 are replaced by the  
M93C66  
Figure 1. Logic Diagram  
DESCRIPTION  
This specification covers a range of 4K bit serial  
EEPROM products, the ST93C66 specified at 5V  
± 10% and theST93C67 specified at 3V to 5.5V.In  
the text, products are referred to as ST93C66.  
The ST93C66 is a 4K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q). The 4K  
bit memory is divided into either 512 x 8 bit bytes  
or 256 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
V
CC  
D
Q
C
S
ST93C66  
ST93C67  
Table 1. Signal Names  
ORG  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
V
SS  
AI01252B  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
July 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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