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ST93C57M1TR PDF预览

ST93C57M1TR

更新时间: 2024-11-04 22:17:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 110K
描述
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM

ST93C57M1TR 数据手册

 浏览型号ST93C57M1TR的Datasheet PDF文件第2页浏览型号ST93C57M1TR的Datasheet PDF文件第3页浏览型号ST93C57M1TR的Datasheet PDF文件第4页浏览型号ST93C57M1TR的Datasheet PDF文件第5页浏览型号ST93C57M1TR的Datasheet PDF文件第6页浏览型号ST93C57M1TR的Datasheet PDF文件第7页 
ST93C56, 56C  
ST93C57C  
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 128 x 16 or 256 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
– 4.5V to 5.5V for ST93C56 version  
– 3V to 5.5V for ST93C57 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ST93C56, ST93C56C, ST93C57C are  
replaced by the M93C56  
Figure 1. Logic Diagram  
DESCRIPTION  
This specification covers a range of 2K bit serial  
EEPROM products, the ST93C56, 56C specified  
at 5V ± 10% and the ST93C57C specified at 3V to  
5.5V. In the text, products are referred to as  
ST93C56.  
V
CC  
The ST93C56 is a 2K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q). The 2K  
bit memory is divided into either 256 x 8 bit bytes  
or 128 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
D
C
Q
ST93C56  
ST93C57  
S
ORG  
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
V
SS  
D
AI00881C  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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