Datasheet > ST330C18L0LPBF

ST330C18L0LPBF

更新时间： 2024-11-05 06:18:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	83K
描述
Silicon Controlled Rectifier, 1230A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4

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ST330C18L0LPBF 数据手册

Bulletin I25154 rev. D 04/03

ST330C..L SERIES

Hockey Puk Version

PHASE CONTROL THYRISTORS

Features

Center amplifying gate

Metal case with ceramic insulator

International standard case TO-200AC (B-PUK)

High profile hockey-puk

650A

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

case style TO-200AC (B-PUK)

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330C..L

650

Units

@ T

°C

I_T(RMS)

1230

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

405

I²t

KA²s

370

V_DRM/V_RRM

400 to 2000

100

typical

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7 8

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与ST330C18L0LPBF相关器件

型号	品牌	获取价格	描述	数据表
ST330C18L1	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L1LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L2	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L2LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L2PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L3L	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1
ST330C18L3LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, TO-200
ST330C20L0L	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 2000V V(DRM), 2000V V(RRM), 1
ST330C20L0LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 2000V V(DRM), 2000V V(RRM), 1
ST330C20L0PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 2000V V(DRM), 2000V V(RRM), 1