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ST330S PDF预览

ST330S

更新时间: 2024-11-03 22:42:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 199K
描述
PHASE CONTROL THYRISTORS Stud Version

ST330S 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
6/B  
ST330S SERIES  
PHASE CONTROL THYRISTORS  
Stud Version  
Features  
330A  
Center amplifying gate  
Hermetic metal case with ceramic insulator  
International standard case TO-209AE (TO-118)  
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5  
Compression Bonded Encapsulation for heavy duty  
operations such as severe thermal cycling  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST330S  
Units  
330  
75  
A
°C  
A
@ TC  
IT(RMS)  
ITSM  
520  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
9000  
A
9420  
A
I2t  
405  
KA2s  
KA2s  
V
370  
V
DRM/VRRM  
400 to 1600  
100  
t
typical  
µs  
q
case style  
TJ  
- 40 to 125  
°C  
TO-209AE (TO-118)  
To Order  
 

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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE
ST330S02MPBF INFINEON

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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
ST330S02P0 INFINEON

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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE
ST330S02P0PBF INFINEON

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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE
ST330S02P1 INFINEON

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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE
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Silicon Controlled Rectifier, 520A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE
ST330S04F0 INFINEON

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Silicon Controlled Rectifier, 520A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE
ST330S04M1L VISHAY

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Silicon Controlled Rectifier, 520 A, 400 V, SCR, TO-209AE
ST330S04M3L VISHAY

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Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
ST330S04P0 ETC

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400V 330A Phase Control SCR in a TO-209AE (TO-118) package