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ST2009DHI PDF预览

ST2009DHI

更新时间: 2024-11-22 22:21:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 263K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST2009DHI 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ISOWATT218, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):55 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ST2009DHI 数据手册

 浏览型号ST2009DHI的Datasheet PDF文件第2页浏览型号ST2009DHI的Datasheet PDF文件第3页浏览型号ST2009DHI的Datasheet PDF文件第4页浏览型号ST2009DHI的Datasheet PDF文件第5页浏览型号ST2009DHI的Datasheet PDF文件第6页 
ST2009DHI  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
NEW SERIES, ENHANCED PERFORMANCE  
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
INTEGRATED FREE WHEELING DIODE  
HIGH VOLTAGE CAPABILITY  
HIGH SWITCHING SPEED  
TIGTHER hfe CONTROL  
IMPROVED RUGGEDNESS  
3
2
APPLICATIONS:  
1
HORIZONTAL DEFLECTION FOR COLOR  
TVS  
ISOWATT218  
DESCRIPTION  
The device is manufactured using Diffused  
Collector technology for more stable operation Vs  
base drive circuit variations resulting in very low  
worst case dissipation.  
INTERNAL SCHEMATIC DIAGRAM  
RBE =35 Ω  
Typ.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
1500  
600  
7
Unit  
V
V
V
A
A
A
W
V
10  
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
20  
IB  
7
o
Ptot  
Total Dissipation at Tc = 25 C  
55  
Visol  
Insulation Withstand Voltage (RMS) from All  
Three Leads to External Heatsink  
2500  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
1/6  
December 2002  

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