是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | ISOWATT218, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 55 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST200AN | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 100V V(DRM), 1 Element, TO-18, TO-18, 3 PIN | |
ST200BG1SPGF | HONEYWELL |
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Amplified output whicheliminates the cost of external amplifiers | |
ST200C04C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele | |
ST200C06C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele | |
ST200C08C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele | |
ST200C10C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E | |
ST200C12C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E | |
ST200C14C | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 770A I(T)RMS, 385000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E | |
ST200C16C | INFINEON |
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暂无描述 | |
ST200N | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 60V V(DRM), 1 Element, TO-18, TO-18, 3 PIN |