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ST173C10CCL3PBF

更新时间： 2024-11-02 12:57:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器
页数	文件大小	规格书
9页	280K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST173C10CCL3PBF 数据手册

Bulletin I25233 10/06

ST173CPbF SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

330A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

Typical Applications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173C..C

330

Units

@ T

°C

I_T(RMS)

I_TSM

I²t

610

@ T

°C

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4680

4900

110

KA²s

100

_DRM/V_RRM

1000 to1200

15 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
ST173C10CCP0	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CCP0L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CCP0LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CCP0P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CCP0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A
ST173C10CCP1	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CCP1L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
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