Datasheet > ST173C10CCP2PBF

ST173C10CCP2PBF

更新时间： 2024-11-22 18:47:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
9页	175K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST173C10CCP2PBF 数据手册

Bulletin I25180 rev. B 04/00

ST173C..C SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

330A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173C..C

330

Units

@ T

°C

I_T(RMS)

610

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4680

4900

110

I²t

KA²s

100

V_DRM/V_RRM

1000 to1200

15 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
ST173C10CCP3	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CCP3L	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173C10CCP3LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CCP3LP	VISHAY	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173C10CCP3LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A
ST173C10CCP3P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CCP3PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A
ST173C10CDH0L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CDH0LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CDH0LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A