Datasheet > SSW/I2N80A

SSW/I2N80A

更新时间： 2024-09-17 03:18:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	264K
描述
Advanced Power MOSFET

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中文翻译

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数据手册

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SSW/I2N80A 数据手册

SSW/I2N80A

Advanced Power MOSFET

FEATURES

BV_DSS= 800 V

R_DS(on)= 6.0 W

I_D= 2 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 mA (Max.) @ V_DS= 800V

Low R_DS(ON): 4.688 W (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

Units

V_DSS

800

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

1.3

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

213

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

2.0

3.1

Total Power Dissipation (T_C=25 C)

P_D

T_J, T_STG

T_L

Linear Derating Factor

W/ C

Operating Junction and

0.64

Storage Temperature Range

Maximum Lead Temp. for Soldering

- 55 to +150

Purposes, 1/8“ from case for 5-seconds

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

1.56

R_q

Junction-to-Ambient

C/W

R_q

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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