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SST39VF016-90-4C-B2K PDF预览

SST39VF016-90-4C-B2K

更新时间： 2024-11-08 20:26:07
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路闪存
页数 文件大小 规格书
24页 249K
描述
Flash, 2MX8, 90ns, PBGA48

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中文翻译

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SST39VF016-90-4C-B2K 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
最长访问时间：90 ns命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：8部门数/规模：512
端子数量：48字数：2097152 words
字数代码：2000000最高工作温度：70 °C
最低工作温度：组织：2MX8
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
部门规模：4K最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.025 mA
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

SST39VF016-90-4C-B2K 数据手册

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8 Mbit / 16 Mbit (x8) Multi-Purpose Flash  
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016  
Data Sheet  
FEATURES:  
•
•
Organized as 1M x8 / 2M x8  
•
Fast Erase and Byte-Program:  
1
-
-
-
-
-
Sector-Erase Time: 18 ms (typical)  
Block-Erase Time: 18 ms (typical)  
Chip-Erase Time: 70 ms (typical)  
Byte-Program Time: 14 µs (typical)  
Chip Rewrite Time:  
15 seconds (typical) for SST39LF/VF080  
30 seconds (typical) for SST39LF/VF016  
Single Voltage Read and Write Operations  
-
-
3.0-3.6V for SST39LF080/016  
2.7-3.6V for SST39VF080/016  
2
•
•
Superior Reliability  
-
-
Endurance: 100,000 Cycles (typical)  
Greater than 100 years Data Retention  
3
Low Power Consumption:  
•
•
Automatic Write Timing  
Internal VPP Generation  
End-of-Write Detection  
-
-
-
Active Current: 15 mA (typical)  
Standby Current: 4 µA (typical)  
Auto Low Power Mode: 4 µA (typical)  
-
4
-
-
Toggle Bit  
Data# Polling  
•
•
•
Sector-Erase Capability  
Uniform 4 KByte sectors  
Block-Erase Capability  
Uniform 64 KByte blocks  
Fast Read Access Time:  
-
•
•
CMOS I/O Compatibility  
5
JEDEC Standard  
-
-
Flash EEPROM Pinouts and command sets  
6
•
Packages Available  
-
-
55 ns for SST39LF080/016  
70 and 90 ns for SST39VF080/016  
-
-
40-Pin TSOP (10mm x 20mm)  
48-Ball TFBGA (6mm x 8mm)  
7
•
Latched Address and Data  
PRODUCT DESCRIPTION  
Erase and Program than alternative flash technologies.  
The total energy consumed is a function of the applied  
voltage, current, and time of application. Since for any  
givenvoltagerange,theSuperFlashtechnologyusesless  
current to program and has a shorter erase time, the total  
energyconsumedduringanyEraseorProgramoperation  
is less than alternative flash technologies. They also  
improveflexibilitywhileloweringthecostforprogram,data,  
and configuration storage applications.  
8
TheSST39LF/VF080andSST39LF/VF016devicesare  
1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF)  
manufacturedwithSST’sproprietary,highperformance  
CMOS SuperFlash technology. The split-gate cell de-  
sign and thick oxide tunneling injector attain better  
reliabilityandmanufacturabilitycomparedwithalternate  
approaches. The SST39LF080/016 write (Program or  
Erase) with a 3.0-3.6V power supply. The  
SST39VF080/016 write (Program or Erase) with a 2.7-  
3.6V power supply. They conform to JEDEC standard  
pinouts for x8 memories.  
9
10  
11  
12  
13  
14  
15  
16  
The SuperFlash technology provides fixed Erase and  
Program times, independent of the number of Erase/  
Program cycles that have occurred. Therefore the sys-  
tem software or hardware does not have to be modified  
or de-rated as is necessary with alternative flash tech-  
nologies, whose Erase and Program times increase  
with accumulated Erase/Program cycles.  
Featuring high performance Byte-Program, the  
SST39LF/VF080andSST39LF/VF016devicesprovide  
atypicalByte-Programtimeof14µsec.Thedevicesuse  
Toggle Bit or Data# Polling to indicate the completion of  
Programoperation.Toprotectagainstinadvertentwrite,  
they have on-chip hardware and Software Data Protec-  
tion schemes. Designed, manufactured, and tested for  
a wide spectrum of applications, these devices are  
offered with a guaranteed endurance of 10,000 cycles.  
Data retention is rated at greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39LF/VF080 and SST39LF/VF016 are offered in  
40-pin TSOP and 48-ball TFBGA packaging. See  
Figures 1 and 2 for pinouts.  
Device Operation  
Commands are used to initiate the memory operation  
functions of the device. Commands are written to the  
device using standard microprocessor write se-  
quences. A command is written by asserting WE# low  
while keeping CE# low. The address bus is latched on  
the falling edge of WE# or CE#, whichever occurs last.  
The data bus is latched on the rising edge of WE# or  
CE#, whichever occurs first.  
The SST39LF/VF080 and SST39LF/VF016 devices are  
suited for applications that require convenient and eco-  
nomical updating of program, configuration, or data  
memory. For all system applications, they significantly  
improve performance and reliability, while lowering power  
consumption. They inherently use less energy during  
© 2000 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.  
396-2 11/00 S71146 These specifications are subject to change without notice.  
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SST39VF016-90-4I-B3I SST

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SST39VF016-90-4I-B3K SST

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SST39VF016-90-4I-EI SST

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