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SST39VF016-90-4C-EIE PDF预览

SST39VF016-90-4C-EIE

更新时间： 2024-11-08 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路闪存
页数 文件大小 规格书
26页 860K
描述
Flash, 2MX8, 90ns, PDSO40

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中文翻译

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SST39VF016-90-4C-EIE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：TSSOP, TSSOP40,.8,20Reach Compliance Code：unknown
风险等级：5.84最长访问时间：90 ns
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G40
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：8部门数/规模：512
端子数量：40字数：2097152 words
字数代码：2000000最高工作温度：70 °C
最低工作温度：组织：2MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP40,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
部门规模：4K最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.03 mA
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
Base Number Matches：1

SST39VF016-90-4C-EIE 数据手册

 浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第2页浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第3页浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第4页浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第5页浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第6页浏览型号SST39VF016-90-4C-EIE的Datasheet PDF文件第7页 
8 Mbit / 16 Mbit (x8) Multi-Purpose Flash  
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016  
SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 1M x8 / 2M x8  
Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF080/016  
– 2.7-3.6V for SST39VF080/016  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Current: 15 mA (typical)  
– Standby Current: 4 µA (typical)  
– Auto Low Power Mode: 4 µA (typical)  
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Block-Erase Capability  
– Uniform 64 KByte blocks  
Fast Read Access Time:  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
•
•
15 seconds (typical) for SST39LF/VF080  
30 seconds (typical) for SST39LF/VF016  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
•
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 40-lead TSOP (10mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
•
– 55 ns for SST39LF080/016  
– 70 and 90 ns for SST39VF080/016  
•
Latched Address and Data  
PRODUCT DESCRIPTION  
The SST39LF/VF080/016 devices are 1M x8 / 2M x8  
CMOS Multi-Purpose Flash (MPF) manufactured with  
SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick oxide tun-  
neling injector attain better reliability and manufacturability  
compared with alternate approaches. The SST39LF080/  
016 write (Program or Erase) with a 3.0-3.6V power supply.  
The SST39VF080/016 write (Program or Erase) with a 2.7-  
3.6V power supply. They conform to JEDEC standard  
pinouts for x8 memories.  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. They also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
Featuring high performance Byte-Program, the SST39LF/  
VF080/016 devices provide a typical Byte-Program time of  
14 µsec. The devices use Toggle Bit or Data# Polling to  
indicate the completion of Program operation. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, these  
devices are offered with a guaranteed endurance of 10,000  
cycles. Data retention is rated at greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39LF/VF080/016 are offered in 40-lead TSOP and 48-  
ball TFBGA packaging. See Figures 1 and 2 for pinouts.  
The SST39LF/VF080/016 devices are suited for applica-  
tions that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during Erase and Program than alter-  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71146-03-000 2/02  
1
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