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SST38VF166-90-4I-EK PDF预览

SST38VF166-90-4I-EK

更新时间： 2024-11-29 19:42:43
品牌 Logo 应用领域
芯科 - SILICON /
页数 文件大小 规格书
52页 595K
描述
Flash Memory

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中文翻译

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SST38VF166-90-4I-EK 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：NBase Number Matches：1

SST38VF166-90-4I-EK 数据手册

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16 Megabit FlashBank Memory  
SST38UF166 / SST38VF166  
Advance Information  
FEATURES:  
•
ReadAccessTime  
•
Single Voltage Read and Write Operations  
– SST38UF166 90 and 120 ns  
– SST38VF166 70 and 90 ns  
– SST38UF166:2.2-2.8V  
– SST38VF166: 2.7-3.6V  
1
•
•
Latched Address and Data  
•
•
Separate Memory Banks for Code or Data  
– Simultaneous Read and Write Capability  
Superior Reliability  
– Endurance: E2 bank - 500,000 Cycles (typical)  
Flash bank - 100,000 Cycles (typical)  
End-of-WriteDetection  
2
– Toggle Bit  
– Data# Polling  
E2 Bank:  
•
•
3
– Greater than 100 years Data Retention  
– Word-Write (Auto Erase before Program)  
– Sector-Erase (32 Words) + Word-Program  
(same as Flash bank)  
•
Low Power Consumption  
– Active Current, Read: 10 mA (typical) for 2.2-2.8V  
and 15 mA (typical) for 2.7-3.6V  
4
Flash Bank: Two Small Erase Element Sizes  
– Active Current, Concurrent Read while Write:  
25 mA (typical) for 2.2-2.8V and 40 mA (typical)  
for 2.7-3.6V  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode Current: 3 µA (typical)  
– 1 KWords per Sector or 32 KWords per Block  
– Erase either element before Word-Program  
5
•
•
•
CMOS I/O Compatibility  
JEDEC Standard Command Set  
PackagesAvailable  
6
•
•
FastWriteOperation  
– Flash Bank-Erase + Program: 8 sec (typical)  
– Flash Block-Erase + Program: 500 ms (typical)  
– Flash Sector-Erase + Program: 30 ms (typical)  
– E2 bank Word-Write: 9 ms (typical)  
– 48-Pin TSOP (12mm x 20mm)  
– 48-Ball TFBGA (8mm x 10mm)  
7
•
•
ContinuousHardwareandSoftwareData  
Protection (SDP)  
A One Time Programmable (OTP) E2 Sector  
Fixed Erase, Program, Write Times  
8
– Remain constant after cycling  
PRODUCT DESCRIPTION  
uses less current to program and has a shorter Erase  
time, the total energy consumed during any Erase, Pro-  
gram, or Write operation is less than alternative flash  
technologies. The Auto Low Power mode automatically  
reducestheactivereadcurrenttoapproximatelythesame  
as standby; thus, providing an average read current of  
approximately 1 mA/MHz of Read cycle time.  
9
TheSST38UF166/VF166consistofthreememorybanks,  
2 each 512K x16 bits sector mode flash EEPROM plus a  
4K x16 bits word alterable E2PROM manufactured with  
SST’s proprietary, high performance SuperFlash Tech-  
nology.TheSST38UF166/VF166eraseandprogramwith  
a single power supply. The internal Erase/Program in the  
E2bankistransparenttotheuser. Thedeviceconformsto  
(proposed) JEDEC standard pinouts for word-wide  
memories.  
10  
11  
12  
13  
14  
15  
16  
The SuperFlash technology provides fixed Erase, Pro-  
gram, and Write times, independent of the number of  
Erase/Program cycles that have occurred. Therefore the  
system software or hardware does not have to be modi-  
fied or de-rated as is necessary with alternative flash  
technologies, whose Erase and Program times increase  
with accumulated Erase/Program cycles.  
The SST38UF166/VF166 devices are divided into three  
separate memory banks, 2 each 512K x16 Flash banks  
and a 4K x16 E2 bank. Each Flash bank is typically used  
for program code storage and contains 512 sectors, each  
of 1 KWords or 16 blocks, each of 32 KWords. The Flash  
banks may also be used to store data. The E2 bank is  
typically used for data or configuration storage and con-  
tains 128 sectors, each of 32 words. Any bank may be  
used for executing code while writing data to a different  
bank. Each memory bank is controlled by separate Bank  
Enable (BE#) lines.  
Device Operation  
The SST38UF166/VF166 operate as two independent 8-  
Megabit Word-Program, Sector-Erase flash EEPROMs  
withtheadditionalfunctionalityofa64Kbitword-alterable  
E2PROM. All banks are superimposed in the same  
memory address space. All three memory banks share  
commonaddresslines,I/Olines,WE#,andOE#.Memory  
bank selection is by bank enable. BE#1 selects the first  
Flash bank, BE#2 selects the second Flash bank, BE#3  
selects the E2 bank. WE# is used with SDP to control the  
Write or Erase and Program operation in each memory  
bank.  
The SST38UF166/VF166 inherently uses less energy  
during Erase, Program, and Write than alternative flash  
technologies. The total energy consumed is a function of  
theappliedvoltage,current,andtimeofapplication.Since  
for any given voltage range, the SuperFlash technology  
© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashBank is a trademark of Silicon Storage Technology, Inc.  
327-12 2/00 These specifications are subject to change without notice.  
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SST38VF6401 MICROCHIP

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 		64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401-90-4I-EKE MICROCHIP

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 		SST38VF6401-90-4I-EKE
SST38VF6401-90-4I-EKE SILICON

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 		Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
SST38VF6401-90-5C-B3KE MICROCHIP

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 		4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-
SST38VF6401-90-5C-EKE MICROCHIP

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 		4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
SST38VF6401-90-5C-EKE-T MICROCHIP

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 		SST38VF6401-90-5C-EKE-T
SST38VF6401-90-5I-B3KE MICROCHIP

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 		4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-
SST38VF6401-90-5I-EKE MICROCHIP

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 		4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
SST38VF6401B MICROCHIP

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 		64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401B-70-5I-CD MICROCHIP

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 		64 Mbit (x16) Advanced Multi-Purpose Flash Plus

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