16 Megabit FlashBank Memory
SST38UF166 / SST38VF166
Advance Information
FEATURES:
•
ReadAccessTime
•
Single Voltage Read and Write Operations
– SST38UF166 90 and 120 ns
– SST38VF166 70 and 90 ns
– SST38UF166:2.2-2.8V
– SST38VF166: 2.7-3.6V
1
•
•
Latched Address and Data
•
•
Separate Memory Banks for Code or Data
– Simultaneous Read and Write Capability
Superior Reliability
– Endurance: E2 bank - 500,000 Cycles (typical)
Flash bank - 100,000 Cycles (typical)
End-of-WriteDetection
2
– Toggle Bit
– Data# Polling
E2 Bank:
•
•
3
– Greater than 100 years Data Retention
– Word-Write (Auto Erase before Program)
– Sector-Erase (32 Words) + Word-Program
(same as Flash bank)
•
Low Power Consumption
– Active Current, Read: 10 mA (typical) for 2.2-2.8V
and 15 mA (typical) for 2.7-3.6V
4
Flash Bank: Two Small Erase Element Sizes
– Active Current, Concurrent Read while Write:
25 mA (typical) for 2.2-2.8V and 40 mA (typical)
for 2.7-3.6V
– Standby Current: 3 µA (typical)
– Auto Low Power Mode Current: 3 µA (typical)
– 1 KWords per Sector or 32 KWords per Block
– Erase either element before Word-Program
5
•
•
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CMOS I/O Compatibility
JEDEC Standard Command Set
PackagesAvailable
6
•
•
FastWriteOperation
– Flash Bank-Erase + Program: 8 sec (typical)
– Flash Block-Erase + Program: 500 ms (typical)
– Flash Sector-Erase + Program: 30 ms (typical)
– E2 bank Word-Write: 9 ms (typical)
– 48-Pin TSOP (12mm x 20mm)
– 48-Ball TFBGA (8mm x 10mm)
7
•
•
ContinuousHardwareandSoftwareData
Protection (SDP)
A One Time Programmable (OTP) E2 Sector
Fixed Erase, Program, Write Times
8
– Remain constant after cycling
PRODUCT DESCRIPTION
uses less current to program and has a shorter Erase
time, the total energy consumed during any Erase, Pro-
gram, or Write operation is less than alternative flash
technologies. The Auto Low Power mode automatically
reducestheactivereadcurrenttoapproximatelythesame
as standby; thus, providing an average read current of
approximately 1 mA/MHz of Read cycle time.
9
TheSST38UF166/VF166consistofthreememorybanks,
2 each 512K x16 bits sector mode flash EEPROM plus a
4K x16 bits word alterable E2PROM manufactured with
SST’s proprietary, high performance SuperFlash Tech-
nology.TheSST38UF166/VF166eraseandprogramwith
a single power supply. The internal Erase/Program in the
E2bankistransparenttotheuser. Thedeviceconformsto
(proposed) JEDEC standard pinouts for word-wide
memories.
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11
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15
16
The SuperFlash technology provides fixed Erase, Pro-
gram, and Write times, independent of the number of
Erase/Program cycles that have occurred. Therefore the
system software or hardware does not have to be modi-
fied or de-rated as is necessary with alternative flash
technologies, whose Erase and Program times increase
with accumulated Erase/Program cycles.
The SST38UF166/VF166 devices are divided into three
separate memory banks, 2 each 512K x16 Flash banks
and a 4K x16 E2 bank. Each Flash bank is typically used
for program code storage and contains 512 sectors, each
of 1 KWords or 16 blocks, each of 32 KWords. The Flash
banks may also be used to store data. The E2 bank is
typically used for data or configuration storage and con-
tains 128 sectors, each of 32 words. Any bank may be
used for executing code while writing data to a different
bank. Each memory bank is controlled by separate Bank
Enable (BE#) lines.
Device Operation
The SST38UF166/VF166 operate as two independent 8-
Megabit Word-Program, Sector-Erase flash EEPROMs
withtheadditionalfunctionalityofa64Kbitword-alterable
E2PROM. All banks are superimposed in the same
memory address space. All three memory banks share
commonaddresslines,I/Olines,WE#,andOE#.Memory
bank selection is by bank enable. BE#1 selects the first
Flash bank, BE#2 selects the second Flash bank, BE#3
selects the E2 bank. WE# is used with SDP to control the
Write or Erase and Program operation in each memory
bank.
The SST38UF166/VF166 inherently uses less energy
during Erase, Program, and Write than alternative flash
technologies. The total energy consumed is a function of
theappliedvoltage,current,andtimeofapplication.Since
for any given voltage range, the SuperFlash technology
© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashBank is a trademark of Silicon Storage Technology, Inc.
327-12 2/00 These specifications are subject to change without notice.
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