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SST25VF010-20-4C-QA-DD029 PDF预览

SST25VF010-20-4C-QA-DD029

更新时间： 2024-11-19 20:14:27
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
22页 235K
描述
EEPROM, 1MX1, Serial, CMOS, WSON-8

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SST25VF010-20-4C-QA-DD029 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SON包装说明：VSON, SOLCC8,.25
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.83Is Samacsys：N
最大时钟频率 (fCLK)：20 MHz耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-XDSO-N8JESD-609代码：e0
长度：6 mm内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX1
封装主体材料：UNSPECIFIED封装代码：VSON
封装等效代码：SOLCC8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, VERY THIN PROFILE并行/串行：SERIAL
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：0.8 mm
串行总线类型：SPI最大待机电流：0.0004 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
类型：NOR TYPE宽度：5 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST25VF010-20-4C-QA-DD029 数据手册

 浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第2页浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第3页浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第4页浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第5页浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第6页浏览型号SST25VF010-20-4C-QA-DD029的Datasheet PDF文件第7页 
1 Mbit SPI Serial Flash  
SST25VF010  
SST25VF0101Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software Status  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
•
•
•
•
Hold Pin (HOLD#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Suspends a serial sequence to the memory  
without deselecting the device  
•
•
•
Low Power Consumption:  
•
•
•
Write Protection (WP#)  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
– Enables/Disables the Lock-Down function of the  
status register  
Flexible Erase Capability  
Software Write Protection  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Write protection through Block-Protection bits in  
status register  
Fast Erase and Byte-Program:  
Packages Available  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC (4.9mm x 6mm)  
– 8-contact WSON  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-com-  
patible interface that allows for a low pin-count package  
occupying less board space and ultimately lowering total  
system costs. SST25VF010 SPI serial flash memory is  
manufactured with SST’s proprietary, high performance  
CMOS SuperFlash Technology. The split-gate cell design  
and thick-oxide tunneling injector attain better reliability  
and manufacturability compared with alternate  
approaches.  
current, and time of application. Since for any given volt-  
age range, the SuperFlash technology uses less current  
to program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies. The  
SST25VF010 device operates with a single 2.7-3.6V  
power supply.  
The SST25VF010 device is offered in both 8-lead SOIC  
and 8-contact WSON packages. See Figure 1 for the pin  
assignments.  
The SST25VF010 device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage,  
©2004 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71233-03-000  
1
2/04  
1234567...22

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