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SST25VF010-20-4C-QAE-DD029 PDF预览

SST25VF010-20-4C-QAE-DD029

更新时间： 2024-11-19 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 283K
描述
1M X 1 SPI BUS SERIAL EEPROM, DSO8, WSON-8

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中文翻译

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SST25VF010-20-4C-QAE-DD029 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SON包装说明：VSON,
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.77最大时钟频率 (fCLK)：20 MHz
JESD-30 代码：R-XDSO-N8JESD-609代码：e3
长度：6 mm内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX1
封装主体材料：UNSPECIFIED封装代码：VSON
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.8 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：5 mmBase Number Matches：1

SST25VF010-20-4C-QAE-DD029 数据手册

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1 Mbit SPI Serial Flash  
SST25VF010  
SST25VF0101 Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software Status  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
•
•
•
•
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
•
•
•
•
•
•
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
Packages Available  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC (4.9mm x 6mm)  
– 8-contact WSON  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-com-  
patible interface that allows for a low pin-count package  
occupying less board space and ultimately lowering total  
system costs. SST25VF010 SPI serial flash memory is  
manufactured with SST’s proprietary, high performance  
CMOS SuperFlash Technology. The split-gate cell design  
and thick-oxide tunneling injector attain better reliability  
and manufacturability compared with alternate  
approaches.  
current, and time of application. Since for any given volt-  
age range, the SuperFlash technology uses less current  
to program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies. The  
SST25VF010 device operates with a single 2.7-3.6V  
power supply.  
The SST25VF010 device is offered in both 8-lead SOIC  
and 8-contact WSON packages. See Figure 1 for the pin  
assignments.  
The SST25VF010 device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage,  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71233-01-000  
1
8/03  
1234567...22

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