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SST25VF010-20-4C-QA PDF预览

SST25VF010-20-4C-QA

更新时间： 2024-11-19 20:31:47
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
24页 687K
描述
EEPROM, 1MX1, Serial, CMOS, WSON-8

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SST25VF010-20-4C-QA 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SON包装说明：HVSON, SOLCC8,.25
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.78Is Samacsys：N
最大时钟频率 (fCLK)：20 MHz耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-XDSO-N8JESD-609代码：e0
长度：6 mm内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX1
封装主体材料：UNSPECIFIED封装代码：HVSON
封装等效代码：SOLCC8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：240电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.8 mm串行总线类型：SPI
最大待机电流：0.0004 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：10
类型：NOR TYPE宽度：5 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST25VF010-20-4C-QA 数据手册

 浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第2页浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第3页浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第4页浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第5页浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第6页浏览型号SST25VF010-20-4C-QA的Datasheet PDF文件第7页 
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash  
SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040  
SST25VF512 / 010 / 020 / 040512Kb / 1Mb / 2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
– Chip Programming Time (typical):  
SST25VF512: 2 seconds  
•
•
SST25VF010: 3 seconds  
SST25VF020: 5 seconds  
SST25VF040: 9 seconds  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
End-of-Write Detection  
– Software Status  
•
•
•
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
•
•
•
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Packages Available  
– 8-lead SOIC (4.9mm x 6mm)  
(SST25VF512/010/020 only)  
– 8-contact WSON  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-com-  
patible interface that allows for a low pin count package  
occupying less board space and ultimately lowering total  
system costs. SST25VFxxx SPI serial flash memories  
are manufactured with SST’s proprietary, high perfor-  
mance CMOS SuperFlash Technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST25VFxxx devices significantly  
improve performance and reliability, while lowering power  
consumption. The SST25VFxxx devices write (Program  
or Erase) with a single 2.7-3.6V power supply. It uses  
less energy during Erase and Program operations than  
alternative flash memory technologies. The total energy  
consumed is a function of the applied voltage, current,  
and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to  
program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies.  
The SST25VF512/010/020 devices are offered in an  
8-lead SOIC package. All densities are offered in the  
8-contact WSON package. See Figure 1 for the pin  
assignments.  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71192-02-000 4/02  
1
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