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SST201T-2T1 PDF预览

SST201T-2T1

更新时间: 2024-11-26 14:44:59
品牌 Logo 应用领域
威世 - VISHAY 放大器光电二极管晶体管
页数 文件大小 规格书
2页 43K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

SST201T-2T1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.64Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SST201T-2T1 数据手册

 浏览型号SST201T-2T1的Datasheet PDF文件第2页 

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