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SST202_SOT-23 PDF预览

SST202_SOT-23

更新时间: 2024-11-26 09:04:35
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MICROSS /
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描述
a high gain N-Channel JFET

SST202_SOT-23 数据手册

  
SST202  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix SST202  
The SST202 is a high gain N-Channel JFET  
FEATURES  
This n-channel JFET is optimised for high gain. The  
DIRECT REPLACEMENT FOR SILICONIX SST202  
LOW CUT OFF VOLTAGE  
HIGH GAIN  
part is particularly suitable for use in low power or high  
impedance amplifiers. The SOT-23 package is well  
suited for cost sensitive applications and mass  
production.  
VGS(off) 1.5  
AV = 80 V/V  
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  
Maximum Temperatures  
(See Packaging Information).  
Storage Temperature  
65°C to +150°C  
55°C to +135°C  
SST202 Benefits:  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
ƒ
ƒ
ƒ
High Input Impedance  
Low Cutoff Voltage  
Low Noise  
350mW  
SST202 Applications:  
Forward Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain Voltage  
50mA  
ƒ
ƒ
ƒ
Battery powered amplifiers  
Audio Pre-Amplifiers  
Infra-Red Detector Amplifiers  
VGDS = 40V  
VGSS = 40V  
Gate to Source Voltage  
SST202 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IDSS  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Drain to Source Saturation Current (Note 2)  
Gate Reverse Current  
MIN  
40  
0.8  
0.9  
2  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
4  
4.5  
100  
UNITS  
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 15V, ID = 10nA  
VDS = 15V, VGS = 0V  
VGS = 20V, VDS = 0V  
V
mA  
IGSS  
Click To Buy  
pA  
IG  
ID(off)  
gfs  
Ciss  
Crss  
Gate Operating Current  
Drain Cutoff Current  
Forward Transconductance  
Input Capacitance  
Reverse Transfer Capacitance  
Equivalent Noise Voltage  
‐‐  
‐‐  
1
‐‐  
‐‐  
‐‐  
2  
2
‐‐  
4.5  
1.3  
6
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
VDG = 10V, ID = 0.1mA  
VDS = 15V, VGS = 5V  
VDS = 15V, VGS = 0V , f = 1kHz  
VDS = 15V, VGS = 0V, f = 1MHz  
mS  
pF  
en  
nV/Hz  
VDS = 10V, ID = 1mA , f = 1kHz  
Note 1 Absolute maximum ratings are limiting values above which SST202 serviceability may be impaired.  
Note 2 – Pulse test: PW300 µs, Duty Cycle 3%  
Micross Components Europe  
Available Packages:  
SOT-23 (Top View)  
SST202 in SOT-23  
SST202 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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