Datasheet > SST202

SST202

更新时间： 2024-11-25 22:21:19

品牌	Logo	应用领域
Linear Systems		/
页数	文件大小	规格书
2页	192K
描述
HIGH GAIN N-CHANNEL JFET

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数据手册

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SST202 数据手册

J/SST201 SERIES

HIGH GAIN

Linear Integrated Systems

N-CHANNEL JFET

FEATURES

DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES

LOW CUTOFF VOLTAGE

HIGH GAIN

V_GS(off)≤ 1.5V

A_V= 80 V/V

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

J SERIES

TO-92

SST SERIES

SOT-23

TOP VIEW

BOTTOM VIEW

-65 to +150 °C

-55 to +135 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Current

D S G

2 3

350mW

50mA

Forward Gate Current

Maximum Voltages

Gate to Drain Voltage

Gate to Source Voltage

-40V

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

J/SST201, 202 -40

Gate to Source

BV_GSS

I_G= -1µA, V_DS= 0V

Breakdown Voltage

J/SST204

J/SST201

J/SST202

J/SST204

J/SST201

J/SST202

J/SST204

-25

-0.3

-0.8

-0.3

0.2

0.9

0.2

-2

-1.5

-4

4.5

Gate to Source Cutoff

Voltage

V_GS(off)

V_DS= 15V, I_D= 10nA

Drain to Source

I_DSS

V_DS= 15V, V_GS= 0V

Saturation Current²

I_GSS

I_G

I_D(off)

Gate Reverse Current

Gate Operating Current

Drain Cutoff Current

-100

V_GS= -20V, V_DS= 0V

V_DG= 10V, I_D= 0.1mA

V_DS= 15V, V_GS= -5V

-2

J/SST201, 204 0.5

J/SST202

Forward

g_fs

_DS= 15V, V_GS= 0V, f = 1kHz

_DS= 15V, V_GS= 0V, f = 1MHz

Transconductance

C_iss

C_rss

e_n

Input Capacitance

4.5

1.3

Reverse Transfer Capacitance

Noise Voltage

nV/√Hz V_DS= 10V, V_GS= 0V, f = 1kHz

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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