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SSR2009MUBS

更新时间： 2024-11-08 13:02:59

品牌	Logo	应用领域
SSDI		/
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SSR2009MUBS 数据手册

SSR2008CTM, SSR2008CTZ

SSR2009CTM, SSR2009CTZ

SSR2010CTM, SSR2010CTZ

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

20 AMPS

100 VOLTS

Designer’s Data Sheet

CENTER TAP

FEATURES:

SCHOTTKY RECTIFIER

•

PIV: 100 Volts

Low Reverse Leakage Current

Low Forward Voltage Drop

TO-254

TO-254Z

Guard Ring for Overvoltage Protection

Isolated Hermetically Sealed Package

Available in Glass or Ceramic Seal Packages

Custom Lead Forming Available

Eutectic Die Attach

175^°C Operating Junction Temperature

TX, TXV, and Space Level Screening Available

Available in Given Voltage (2008, 2009, 2010) in the Following Configurations:

TO-254: SSR2010CTM, SSR2010CTMUB, SSR2010CTMDB, SSR2010CAM, SSR2010CAMUB, SSR2010CAMDB

SSR1010DM, SSR1010DMUB, SSR1010DMDB

TO-254Z: SSR2010CTZ, SSR2010CTZUB, SSR2010CTZDB, SSR2010CAZ, SSR2010CAZUB, SSR2010CAZDB

SSR1010DZ, SSR1010DZUB, SSR1010DZDB

MAXIMUM RATINGS ^1/

Symbol

Value

Unit

Peak Repetitive Reverse Voltage and

DC Blocking Voltage

V_RRM

V_RWM

V_R

SSR2008CTM & CTZ

SSR2090CTM & CTZ

SSR2010CTM & CTZ

Volts

100

3/ 4/

Average Rectified Forward Current

I_O

Amps

(Resistive Load, 60 Hz, Sine Wave, T_C= 25^°C)

3/ 4/

Peak Surge Current

I_FSM

300

Amps

^°C

(8.3 ms Pulse, Half Sine Wave, T_A= 25^°C)

Operating and Storage Temperature

Maximum Thermal Resistance

T_OP& T_stg-65 to +175

Junction to Case ^3/

Junction to Case ^2/

1.0

^°C/W

R_θJC

1.7

NOTE:

1/ All Electrical Characteristics @25^°C, Unless Otherwise Specified.

2/ Per Leg.

3/ Pins 1 and 3 Connected Together.

4/ Doubler: I_O= 10A, I_FSM= 200A.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: RS0075F

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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