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SSR2010CAJ PDF预览

SSR2010CAJ

更新时间: 2024-09-22 03:30:59
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 140K
描述
20 AMPS, 100 VOLTS CENTERTAP SCHOTTKY RECTIFIER

SSR2010CAJ 技术参数

生命周期:Active零件包装代码:TO-257AA
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:TO-257AAJESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SSR2010CAJ 数据手册

 浏览型号SSR2010CAJ的Datasheet PDF文件第2页 
SSR2010CTJ, SSR2010CAJ,  
SSR2010DJ, & SSR2010DRJ  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
20 AMPS, 100 VOLTS  
CENTERTAP  
Part Number / Ordering Information 1/  
SSR2010 __ J __ __  
SCHOTTKY RECTIFIER  
Screening 2/ __ = Not Screened  
TX = TX Level  
TXV= TXV Level  
FEATURES:  
S
= S Level  
PIV 100 Volts  
Lead Bending: 3/  
Low Forward Voltage Drop  
__ = Straight  
Low Reverse Leakage Current  
Hermetically Sealed Isolated Package  
Custom Lead Forming Available  
Ultrasonic Aluminum Wire Bonds  
Guard Ring for Overvoltage Protection  
Eutectic Die Attach  
UB = Up Bend  
DB = Down Bend  
Package: 3/  
J
= TO-257  
175°C Operating Junction Temperature  
TX, TXV, or Space Level Screening Available  
Configuration:  
CT = Common Cathode  
CA = Common Anode  
D
= Doubler  
DR = Doubler Reverse  
Maximum Ratings  
Symbol  
Value  
Units  
Peak Repetitive Reverse Voltage and DC  
VRRM  
VRWM  
VR  
Blocking Voltage  
SSR2010CTJ, SSR2010CAJ  
SSR2010DJ, SSR2010DRJ  
100  
Volts  
Average Rectified Output Current 3/  
(Resistive Load, 60Hz, Sine Wave, TA=25°C)  
IO  
10  
Amps  
Amps  
Peak Surge Current 3/  
(8.3 ms Pulse, Half Sine Wave, superimposed on IO,  
allow junction to reach equilibrium between pulses,  
TA=25°C)  
IFSM  
200  
Operating and Storage Temperature  
TOP & TSTG  
RθJC  
-65 to +175  
°C  
Junction to Case 4/  
Junction to Case 3/  
Maximum Thermal  
Resistance  
1.0  
2.0  
°C/W  
Available in the following configurations:  
Rectifier: SSR2010J, SSR2010JDB, and SSR2010JUB (See Data Sheet RS0087)  
Common Cathode Centertap: SSR2010CTJ, SSR2010CTJDB, and SSR2010CTJUB  
Common Anode Centertap: SSR2010CAJ, SSR2010CAJDB, and SSR2010CAJUB  
Doubler: SSR2010DJ, SSR2010DJDB, and SSR2010DJUB  
TO-257(J)  
Doubler Reverse: SSR2010DRJ, SSR2010DRJDB, and SSR2010DRJUB  
NOTES: 1/ For ordering information, Price, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Per Leg.  
4/ Both Legs Tied Together.  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RS0073E  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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