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SSR2010CTM PDF预览

SSR2010CTM

更新时间: 2024-09-22 03:30:59
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 178K
描述
20 AMPS 100 VOLTS CENTER TAP SCHOTTKY RECTIFIER

SSR2010CTM 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.73 VJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:20 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR2010CTM 数据手册

 浏览型号SSR2010CTM的Datasheet PDF文件第2页 
SSR2008CTM, SSR2008CTZ  
SSR2009CTM, SSR2009CTZ  
SSR2010CTM, SSR2010CTZ  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
20 AMPS  
100 VOLTS  
Designer’s Data Sheet  
CENTER TAP  
FEATURES:  
SCHOTTKY RECTIFIER  
PIV: 100 Volts  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
TO-254  
TO-254Z  
Guard Ring for Overvoltage Protection  
Isolated Hermetically Sealed Package  
Available in Glass or Ceramic Seal Packages  
Custom Lead Forming Available  
Eutectic Die Attach  
175°C Operating Junction Temperature  
TX, TXV, and Space Level Screening Available  
Available in Given Voltage (2008, 2009, 2010) in the Following Configurations:  
TO-254: SSR2010CTM, SSR2010CTMUB, SSR2010CTMDB, SSR2010CAM, SSR2010CAMUB, SSR2010CAMDB  
SSR1010DM, SSR1010DMUB, SSR1010DMDB  
TO-254Z: SSR2010CTZ, SSR2010CTZUB, SSR2010CTZDB, SSR2010CAZ, SSR2010CAZUB, SSR2010CAZDB  
SSR1010DZ, SSR1010DZUB, SSR1010DZDB  
MAXIMUM RATINGS 1/  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage and  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
80  
90  
SSR2008CTM & CTZ  
SSR2090CTM & CTZ  
SSR2010CTM & CTZ  
Volts  
100  
3/ 4/  
Average Rectified Forward Current  
IO  
20  
Amps  
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)  
3/ 4/  
Peak Surge Current  
IFSM  
300  
Amps  
°C  
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)  
Operating and Storage Temperature  
Maximum Thermal Resistance  
TOP & Tstg -65 to +175  
Junction to Case 3/  
Junction to Case 2/  
1.0  
°C/W  
RθJC  
1.7  
NOTE:  
1/ All Electrical Characteristics @25°C, Unless Otherwise Specified.  
2/ Per Leg.  
3/ Pins 1 and 3 Connected Together.  
4/ Doubler: IO = 10A, IFSM = 200A.  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RS0075F  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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