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SSPL7508 PDF预览

SSPL7508

更新时间: 2024-11-21 21:19:39
品牌 Logo 应用领域
固锝 - GOOD-ARK 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 1079K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

SSPL7508 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.75其他特性:ULTRA LOW RESISTANCE
雪崩能效等级(Eas):908 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):480 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSPL7508 数据手册

 浏览型号SSPL7508的Datasheet PDF文件第2页浏览型号SSPL7508的Datasheet PDF文件第3页浏览型号SSPL7508的Datasheet PDF文件第4页浏览型号SSPL7508的Datasheet PDF文件第5页浏览型号SSPL7508的Datasheet PDF文件第6页浏览型号SSPL7508的Datasheet PDF文件第7页 
SSPL7508  
75V N-Channel MOSFET  
Main Product Characteristics  
VDSS 75V  
RDS(on) 6.25mohm(typ.)  
ID 120A  
MarkingandPin  
Assignment  
SchematicDiagram  
TO-220  
Features and Benefits  
AdvancedProcessTechnology  
Special designed for PWM, load switching and  
generalpurposeapplications  
Ultralowon-resistancewithlowgatecharge  
Fastswitching andreversebodyrecovery  
175operating temperature  
Leadfreeproduct  
Description  
These N-Channel enhancement mode power field effect transistors are produced using  
proprietary MOSFET technology. This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching performance, and withstand high energy  
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency  
switch mode power supplies.  
Absolute Max Rating  
Symbol  
Parameter  
Max.  
120 ①  
100 ①  
480  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ②  
A
Power Dissipation ③  
312  
W
W/°C  
V
PD @TC = 25°C  
Linear Derating Factor  
2.08  
VDS  
Drain-Source Voltage  
75  
VGS  
Gate-to-Source Voltage  
± 20  
V
EAS  
Single Pulse Avalanche Energy @ L=0.15mH  
Avalanche Current @ L=0.15mH  
Operating Junction and Storage Temperature Range  
908  
mJ  
A
IAS  
110  
TJ TSTG  
-55 to +175  
°C  
www.goodark.com  
Page 1 of 7  
Rev.1.0  

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