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SSPR42P03 PDF预览

SSPR42P03

更新时间: 2024-11-22 01:16:15
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 357K
描述
P-Channel Enhancement Mode Power MOSFET

SSPR42P03 数据手册

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SSPR42P03  
-42A , -30V , RDS(ON) 15 m  
P-Channel Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SPR-8PP  
The SSPR42P03 provide the designer with the best  
combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness. The SPR-8PP package  
is universally preferred for all commercial-industrial surface  
mount applications and suited for low voltage applications  
such as DC/DC converters.  
FEATURES  
Lower Gate Charge  
Simple Drive Requirement  
Fast Switching Characteristic  
MARKING  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
3.40  
3.25  
3.40  
3.20  
Min.  
1.35  
0.24  
Max.  
1.55  
0.35  
42P03  
A
B
C
D
E
F
3.25  
3.05  
3.20  
3.00  
G
H
I
J
K
L
ꢁꢁꢁꢁ  
= Date code  
1.13 REF.  
0.30  
0.10  
0.70  
0.50  
0.20  
0.90  
0.65 BSC.  
2.40  
2.60  
PACKAGE INFORMATION  
Package  
MPQ  
3K  
Leader Size  
SPR-8PP  
13 inch  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
-30  
Unit  
V
Gate-Source Voltage  
VGS  
±20  
V
TC=25°C  
-42  
Continuous Drain Current 1@VGS=10V  
ID  
A
TC=100°C  
-27  
Pulsed Drain Current 2  
Single Pulse Avalanche Energy 3  
Avalanche Current  
IDM  
EAS  
IAS  
-130  
264  
A
mJ  
A
-42  
Power Dissipation 4  
TC=25°C  
P D  
37  
W
°C  
Operating Junction & Storage Temperature  
TJ, TSTG  
-55~150  
Thermal Resistance Rating  
Thermal Resistance Junction-Ambient1(Max).  
Thermal Resistance Junction-Case1(Max).  
RθJA  
RθJC  
75  
°C / W  
°C / W  
3.38  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
20-May-2014 Rev.A  
Page 1 of 4  

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