Datasheet > SSPR42P03_15

SSPR42P03_15

更新时间： 2024-11-22 01:23:19

品牌	Logo	应用领域
SECOS		/
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4页	357K
描述
P-Channel Enhancement Mode Power MOSFET

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SSPR42P03_15 数据手册

SSPR42P03

-42A , -30V , R_DS(ON)15 mΩ

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SPR-8PP

The SSPR42P03 provide the designer with the best

combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The SPR-8PP package

is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications

such as DC/DC converters.

FEATURES

ꢀ

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

MARKING

Millimeter

REF.

Min.

Max.

3.40

3.25

3.40

3.20

Min.

1.35

0.24

Max.

1.55

0.35

42P03

3.25

3.05

3.20

3.00

ꢁꢁꢁꢁ

ꢁ

= Date code

1.13 REF.

0.30

0.10

0.70

0.50

0.20

0.90

0.65 BSC.

2.40

2.60

PACKAGE INFORMATION

Package

MPQ

Leader Size

SPR-8PP

13 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

V_DS

Rating

-30

Unit

Gate-Source Voltage

V_GS

±20

T_C=25°C

-42

Continuous Drain Current ¹@V_GS=10V

I_D

T_C=100°C

-27

Pulsed Drain Current ²

Single Pulse Avalanche Energy ³

Avalanche Current

I_DM

EAS

I_AS

-130

264

-42

Power Dissipation ⁴

T_C=25°C

P _D

°C

Operating Junction & Storage Temperature

T_J, T_STG

-55~150

Thermal Resistance Rating

Thermal Resistance Junction-Ambient¹(Max).

Thermal Resistance Junction-Case¹(Max).

R_θJA

R_θJC

°C / W

3.38

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

20-May-2014 Rev.A

Page 1 of 4

12 3 4

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