Datasheet > SSPL6022

SSPL6022

更新时间： 2022-02-26 14:45:48

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1051K
描述
60V N-Channel MOSFET

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SSPL6022 数据手册

SSPL6022

60V N-Channel MOSFET

Main Product Characteristics

V_DSS60V

R_DS(on) 20mohm(typ.)

I_D50A

MarkingandPin

Assignment

TO-220

SchematicDiagram

Features and Benefits



AdvancedProcessTechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

175℃operating temperature

Leadfreeproduct

Description

These N-Channel enhancement mode power field effect transistors are produced using our

proprietary MOSFET technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.

Absolute Max Rating

Symbol

Parameter

Max.

Units

I_D@ TC = 25°C

ID @ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

200

130

W/°C

Power Dissipation③

P_D@TC = 25°C

Linear Derating Factor

1.0

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

1010

E_AS

Single Pulse Avalanche Energy @ L=5.6mH

Avalanche Current @ L=5.6mH

Operating Junction and Storage Temperature Range

I_AS

T_JT_STG

-55 to + 175

°C

www.goodark.com

Page 1 of 7

Rev.1.2

12 3 4 5 6 7

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