Datasheet > SSP10N60

SSP10N60

更新时间： 2024-01-11 19:56:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	910K
描述
600V N-Channel MOSFET

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SSP10N60 数据手册

SSP10N60B/SSS10N60B

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

•

9.0A, 600V, R

= 0.8Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 54 nC)

Low Crss ( typical 32 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

SSP Series

TO-220F

SSS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

SSP10N60B

SSS10N60B

Units

Drain-Source Voltage

600

DSS

- Continuous (T = 25°C)

Drain Current

9.0

5.7

9.0 *

5.7 *

36 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

520

9.0

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.6

5.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

156

- Derate above 25°C

Operating and Storage Temperature Range

1.25

0.4

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

SSP10N60B

SSS10N60B

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

0.8

0.5

2.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

Rev. B, January 2003

12 3 4 5 6 7...10

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