Datasheet > SSP1027

SSP1027

更新时间： 2024-02-03 18:17:15

品牌	Logo	应用领域
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页数	文件大小	规格书
4页	400K
描述
P-Channel Enhancement Mode Mos.FET

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SSP1027 数据手册

SSP1027

-3.5 A, -20 V, RDS(ON) 97 mΩ

P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications.

FEATURES

z Low On-Resistance

z Low Gate Charge

PACKAGE DIMENSIONS

TDFN

PIN#1 Indent

S1 G1 D2

D1 D2

D1 G2 S2

Side View

Bottom View

Millimeter

REF.

Min.

1.900

Max.

2.100

Min.

Max.

0.520

0.720

0.650 TYP

0.200 MIN

0.650

0.800

0.150

0.900

0.250

0.350

1.100

0.350

0.203 REF

0.000

0.050

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-3.5

-2.8

-15

0.7

Continuous Drain Current³

Pulsed Drain Current¹

Power Dissipation

P_D@T_A=25℃

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.006

-55 ~ +150

W/℃

℃

T_J, T_STG

THERMAL DATA

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient³(Max)

R_θJA

℃/W

01-June-2003 Rev. A

Page 1 of 4

12 3 4

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