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SSM60T03GP PDF预览

SSM60T03GP

更新时间: 2024-09-25 06:14:23
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描述
N-channel Enhancement-mode Power MOSFET

SSM60T03GP 数据手册

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SSM60T03GP,S  
N-channel Enhancement-mode Power MOSFET  
Low gate-charge  
BVDSS  
RDS(ON)  
ID  
30V  
D
S
Simple drive requirement  
Fast switching  
12m  
45A  
G
Pb-free, RoHS compliant.  
DESCRIPTION  
G
The SSM60T03GS is in a TO-263 package, which is widely used for  
commercial and industrial surface-mount applications. This device is  
suitable for low-voltage applications such as DC/DC converters.  
The through-hole version, the SSM60T03GP in TO-220, is available for  
vertical-mounting, where a small footprint is required on the board, and/or  
an external heatsink is to be attached.  
D
S
TO-263 (S)  
TO-220(P)  
These devices are manufactured with an advanced process, permitting  
operation up to a maximum junction temperature of 175°C.  
G
D
S
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
30  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
±20  
45  
V
Continuous Drain Current  
ID @ TC=25°C  
ID @ TC=100°C  
IDM  
A
Continuous Drain Current  
32  
A
Pulsed Drain Current1  
Total Power Dissipation  
Linear Derating Factor  
120  
44  
A
PD @ TC=25°C  
W
0.352  
W/°C  
TSTG  
TJ  
Storage Temperature Range  
-55 to 175  
-55 to 175  
°C  
°C  
Operating Junction Temperature Range  
THERMAL DATA  
Symbol  
Parameter  
Value  
Units  
°C/W  
°C/W  
R
ΘJC  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance Junction-ambient  
3.4  
R
ΘJA  
62  
9/16/2005 Rev.3.1  
www.SiliconStandard.com  
1 of 5  

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