是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | Is Samacsys: | N |
配置: | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 0.1 A | 最大漏极电流 (ID): | 0.1 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 2 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM5P16FU | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM60T03GH | SSC |
获取价格 |
N-channel Enhancement-mode Power MOSFET | |
SSM60T03GJ | SSC |
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N-channel Enhancement-mode Power MOSFET | |
SSM60T03GP | SSC |
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N-channel Enhancement-mode Power MOSFET | |
SSM6100FR | SENSITRON |
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Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, MELF-2 | |
SSM6100HE | SENSITRON |
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Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, MELF-E, 2 PIN | |
SSM6100RG | SENSITRON |
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Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
SSM610-2 | GAMEWELL-FCI |
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Analog Addressable Control Panel | |
SSM610-4 | GAMEWELL-FCI |
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Analog Addressable Control Panel | |
SSM610HE | SENSITRON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, MELF-E, 2 PIN |