Datasheet > SSM25T03GJ

SSM25T03GJ

更新时间： 2024-11-03 06:14:23

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描述
N-channel Enhancement-mode Power MOSFET

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SSM25T03GJ 数据手册

SSM25T03GH,J

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM25T03 acheives fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

30V

35mW

20A

The SSM25T03GH is in a TO-252 package, which is

widely used for commercial and industrial surface-mount

applications.

Pb-free; RoHS-compliant TO-251 (IPAK)

and TO-252 (DPAK)

The through-hole version, the SSM250T03GJ in TO-251,

is available for vertical mounting, where a small footprint

is required on the board, and/or an external heatsink is

to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-251 (suffix J)

TO-252 (suffix H)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

V_GS

±20

Continuous drain current, T = 25°C

I_D

T = 100°C

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

Linear derating factor

0.16

W/°C

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

-55 to 150

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

ΘJC

ΘJA

Maximum thermal resistance, junction-case

°C/\W

°C/W

Maximum thermal resistance, junction-ambient

110

Notes:

1.Pulse width must be limited to avoid exceeding the safe operating area.

2.Pulse width <300us, duty cycle <2%.

10/2/2006 Rev.3.1

www.SiliconStandard.com

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