是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.92 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.025 A |
基于收集器的最大容量: | 1.6 pF | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.4 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 620 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SS9016F | FAIRCHILD |
获取价格 |
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Very High Frequency Band, Sili | |
SS9016-G | SAMSUNG |
获取价格 |
暂无描述 | |
SS9016-H | SAMSUNG |
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RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Very High Frequency Band, Sili | |
SS9016I | FAIRCHILD |
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暂无描述 | |
SS9018 | FAIRCHILD |
获取价格 |
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner | |
SS9018 | SAMSUNG |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
SS9018D | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
SS9018-D | SAMSUNG |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
SS9018E | CJ |
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Transistor | |
SS9018-E | SAMSUNG |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic |